(top view) sc-70 (3-leads) drain gate 3 1 2 source marking diagram t4 = specific device code m = month code t4 1 3 2 pin connections sc-70 s-lnts4409nwt1g leshan radio company, ltd. m small signal mosfet 25 v, 0.75 a, single, n?channel, esd protection, sc?70/sot?323 features ? advance planar technology for fast switching, low r ds(on) ? higher efficiency extending battery life ? this is a pb?free device applications ? boost and buck converter ? load switch ? battery protection v (br)dss r ds(on) typ i d max 25 v 249 m @ 4.5 v 299 m @ 2.7 v 0.75 a device package shipping (pb?free) 3000/tape & reel maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain?to?source voltage v dss 25 v gate?to?source voltage v gs 8.0 v drain current t < 5 s t a = 25 c i d 0.75 a continuous drain curren t (note 1) steady state t a = 25 c i d 0.7 a t a = 75 c 0.6 power dissipation (note 1) steady state p d 0.28 w power dissipation (note 1) t 5 s p d 0.33 w pulsed drain current t p = 10 s i dm 3.0 a operating junction and storage temperature t j , t stg ?55 to +150 c source current (body diode) (note 1) i s 0.3 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c esd rating ? machine model 250 v thermal resistance ratings rating symbol max unit junction?to?ambient ? steady state (note 1) r ja 450 c/w junction?to?ambient ? t 5 s (note 1) r ja 375 maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). 1 3 2 rev .a 1/5 lnts4409nwt1g lnts4409nwt1g sc?70 s-lnts4409nwt1g ? s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable.
lnts4409nwt1g , s-lnts4409nwt1g leshan radio company, ltd. electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 25 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j 30 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 20 v t j = 25 c 0.5 a t j = 70 c 2.0 t j = 125 c 5.0 gate?to?source leakage current i gss v ds = 0 v, v gs = 8.0 v 3 ua on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 0.5 1.5 v negative threshold temperature coefficient v gs(th) /t j ?2.0 mv/ c drain?to?source on resistance r ds(on) v gs = 4.5 v, i d = 0.6 a 249 350 m v gs = 2.7 v, i d = 0.2 a 299 400 v gs = 4.5 v, i d = 1.2 a 260 forward transconductance g fs v ds = 5.0 v, i d = 0.5 a 0.5 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 10 v 49 60 pf output capacitance c oss 22.4 30 reverse transfer capacitance c rss 8.0 12 total gate charge q g(tot) v gs = 4.5 v, v ds = 15 v, i d = 0.8 a 1.2 1.5 nc threshold gate charge q g(th) 0.2 gate?to?source charge q gs 0.28 0.50 gate?to?drain charge q gd 0.3 0.40 switching characteristics (note 3) turn?on delay time t d(on) v gs = 4.5 v, v ds = 15 v, i d = 0.7 a, r g = 51 5.0 12 ns rise time t r 8.2 8.0 turn?off delay time t d(off) 23 35 fall time t f 41 60 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 0.6 a t j = 25 c 0.82 1.20 v 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures. rev .a 2/5
leshan radio company, ltd. typical performance curves (t j = 25 c unless otherwise noted) 03 1 v ds , drain?to?source voltage (volts) i d, drain current (amps) 2.4 0.8 0 figure 1. on?region characteristics 0.8 3.2 3.2 1.6 4 2.4 1.6 0 0 figure 2. transfer characteristics v gs , gate?to?source voltage (volts) 0.4 0.2 0 figure 3. on?resistance vs. drain current and temperature i d, drain current (amps) r ds(on), drain?to?source resistance ( ) i d, drain current (amps) figure 4. on?resistance vs. drain current and gate voltage ?50 0 ?25 25 1.4 1.2 1 0.8 0.6 50 125 100 figure 5. on?resistance variation with temperature t j , junction temperature ( c) t j = 25 c 0.8 1.6 t j = ?55 c t j = 125 c 75 150 i d = 0.75 a r ds(on), drain?to?source resistance (normalized) 2 25 c 0 3.2 figure 6. capacitance variation 2.5 v 8 v v ds 10 v 0.6 v gs = 2 v 1.6 3.2 0.8 2.4 t j = 125 c 2.4 v gs = 4.5 v t j = ?55 c t j = 25 c 0.8 2 1.6 0.5 1.5 2.5 v gs = 1.5 v 3 v 4.5 v v gs = 0 v 10 0 80 60 20 0 drain?to?source voltage (volts) c, capacitance (pf) t j = 25 c c oss c iss c rss 525 15 40 100 20 0.4 0.2 0 i d, drain current (amps) r ds(on), drain?to?source resistance ( ) 0.8 1.6 t j = 125 c 0 3.2 0.6 2.4 v gs = 2.5 v t j = ?55 c t j = 25 c 0.8 1.8 v gs = 4.5 v v gs = 2.5 v rev .a 3/5 lnts4409nwt1g , s-lnts4409nwt1g
leshan radio company, ltd. typical performance curves (t j = 25 c unless otherwise noted) 0 0.6 4 1 0 figure 7. gate?to?source and drain?to?source voltage vs. total charge q g , total gate charge (nc) v gs, gate?to?source voltage (volts) i d = 0.8 a t j = 25 c 1.4 2 3 5 0.4 0.2 q g(tot) q gs q gd figure 8. diode forward voltage vs. current 0.8 0 v sd , source?to?drain voltage (volts) i s , source current (amps) v gs = 0 v 3.2 0.6 0.4 1.6 0.8 1 0.2 t j = 25 c 2.4 1.2 0 0.8 1.0 1.2 v gs t j = 125 c rev .a 4/5 lnts4409nwt1g , s-lnts4409nwt1g
leshan radio company, ltd. 5 package dimensions sc?70 (sot?323) style 8: pin 1. gate 2. source 3. drain 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 soldering footprint* a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.7 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.425 ref 0.028 ref 0.026 bsc 0.017 ref rev .a 5/5 lnts4409nwt1g , s-lnts4409nwt1g
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